Advanced Qualification · A-002 Advanced components and circuits · A-002-004-011
Dans un transistor à effet de champ (MOSFET) à enrichissement avec canal P, le déplacement des trous est associé à :
- Al'enrichissement du canal N
- Bl'appauvrissement du canal Q
- Cl'enrichissement du canal P
- Dl'appauvrissement du canal N
Correct answer: C — l'enrichissement du canal P. Question tirée de la banque officielle d'ISDE.
Why
In a p-channel enhancement type MOSFET, the main carriers moving through the channel are holes, which act like positive charges filling empty spots in the crystal structure. The full explanation — and one for every question — is in Pro.
Practise this section
Advanced components and circuits is section A-002 of the Advanced exam: Advanced components and circuits: semiconductors, amplifier classes, oscillators, mixers, filters and digital logic.
Drill A-002 — free, no account